The Resistor R1 acts as the load resistor while the resistor R2 acts as the resistor that emits. In the above circuit, the resistors R3 & R4 create a potential divider that determines the base voltage of the emitter. In the above circuit of 2N5551, the input sine wave of 8mV is amplified up to 50mV, as illustrated in the diagram. If you're seeking an NPN transistor to use in your amplifier circuit, this transistor may be the best option. A basic bare minimum circuit to allow a transistor to serve as an amplifier can be seen above. It can be extensively utilized for amplification. The 2N5551 transistor is typically utilized to amplify audio signals or other low-power signals. The voltage of the Collector-Emitter: 160 V The High DC Current Gain (hFE) is usually 80 when IC = 10mA This article will be divided into below parts: 2N5551 Datasheet, 2N5551 Pinout, 2N5551 Equivalent, 2N5551 Transistor Applications, and so on. Today, easybom will introduce the details about it. It also has good shifting properties thus allowing it to amplify low-level signals. Its amplification factor (hfe) is 80 when the current of the collector is 10mA. 2N5551 can be described as an NPN amplifier transistor.
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